publication date : oct 2011 1 < silicon rf power mos fet ( discrete ) > rd 00 h v s 1 rohs compliance, silicon mosfet power transistor 175mhz,0.5w description rd00hvs1 is a mos fet type transistor specifically designed for v hf /uhf rf amplifiers applications. features high power g ain pout > 0.5 w, gp> 20 db @vdd=12.5v,f= 175 mhz application for output stage of high power amplifiers in vhf/uhf band mobile radio sets. rohs compliant rd00hvs1 - 101,t113 is a rohs compliant products. this product includes the lead in high melting temperature type solders. how ever, it is applicable to the following exceptions of rohs directions. 1.lead in high melting temperature type solders ( i.e.tin - lead solder alloys co ntaining more than85% lead.) absolute maximum ratings (tc=25 deg.c unless otherwise noted) symbol parameter conditions ratings unit vdss drain to source voltage vgs=0v 3 0 v vgss gate to source voltage vds=0v +/ - 1 0 v pch channel dissipation t c =25 c 3.1 w pin input power zg=zl=50 ? 20 mw id drain current - 200 ma tch channel temperature - 150 c tstg storage temperature - - 40 to +1 25 c rth j - c thermal resistance junction to case 40 c/w note: above parameters are guaranteed independently. electrica l characteristics (tc=25 deg.c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =17v, v gs =0v - - 25 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 u a v th gate threshold voltage v ds =1 2 v, i ds =1ma 1 2 3 v pout output power 0.5 0.8 - w ? d drain efficiency v dd =12.5v, pin= 5m w, f= 175 mhz ,idq=50ma 50 60 - % note: above parameters, ratings, limits and conditions are subject to change. outline drawing lot no. 0.4+/-0.07 1 2 3 0 . 8 m i n 0.4+/-0.07 0.5+/-0.07 1.5+/-0.1 0.1 max 1.5+/-0.1 2 . 5 + / - 0 . 1 type name 1.6+/-0.1 0 . 1 4.4+/-0.1 +0.03 -0.05 terminal no. 1 : gate 2 : sourse 3 : drain unit : mm 0.4 3 . 9 + / - 0 . 3 1.5+/-0.1
< silicon rf power mos fet ( discrete ) > rd00hvs1 rohs compliance, silicon mosfet power transistor 175mhz,0.5w publication date : oct 2011 2 typical characteristics channel dissipation vs. ambient temperature 0 1 2 3 4 0 40 80 120 160 200 ambient temperature ta ( c ) c h a n n e l d i s s i p a t i o n p c h ( w ) . . . on pcb(*1) on pcb(*1) with heat-sink *1:the material of the pcb glass epoxy (t=0.6 mm) vds-ids characteristics 0 0.5 1 1.5 0 2 4 6 8 10 vds(v) i d s ( a ) ta =+ 25 c vgs=9v vgs=8v vgs=7v vgs=6v vgs=5v vgs=4v vgs=3v vgs=10v vgs-ids characteristics 0.0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 vgs(v) i d s ( a ) ta =+ 25 c vds=10v vds vs. ciss characteristics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) c i s s ( p f ) ta =+ 25 c f=1mhz vds vs. coss characteristics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) c o s s ( p f ) ta =+ 25 c f=1mhz vds vs. crss characteristics 0 1 2 3 4 0 5 10 15 20 vds(v) c r s s ( p f ) ta =+ 25 c f=1mhz
< silicon rf power mos fet ( discrete ) > rd00hvs1 rohs compliance, silicon mosfet power transistor 175mhz,0.5w publication date : oct 2011 3 typical characteristics pin-po characteristics 0 5 10 15 20 25 30 35 -15 -10 -5 0 5 10 15 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 30 40 50 60 70 80 90 100 d ( % ) ta=+25c f=175mhz vdd=12.5v idq=50ma po gp pin-po characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 pin(mw) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 120 d ( % ) po d idd ta=25c f=175mhz vdd=12.5v idq=50ma vdd-po characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 4 6 8 10 12 14 vdd(v) p o ( w ) 0 40 80 120 160 200 240 280 i d d ( m a ) po idd ta=25c f=175mhz pin=5mw idq=50ma zg=zi=50 ohm pin-po characteristics 0 5 10 15 20 25 30 35 -15 -10 -5 0 5 10 15 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 30 40 50 60 70 80 90 100 d ( % ) ta=+25c f=520mhz vdd=12.5v idq=50ma po gp pin-po characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 20 pin(mw) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 120 140 d ( % ) po d idd ta=25c f=520mhz vdd=12.5v idq=50ma vdd-po characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 4 6 8 10 12 14 vdd(v) p o ( w ) 0 40 80 120 160 200 240 280 320 i d d ( m a ) po idd ta=25c f=520mhz pin=15mw idq=50ma zg=zi=50 ohm
< silicon rf power mos fet ( discrete ) > rd00hvs1 rohs compliance, silicon mosfet power transistor 175mhz,0.5w publication date : oct 2011 4 test circuit(f=175mhz) test circuit(f=520mhz) 19.5mm 18mm 20.5mm 180pf 4.7kohm c1 c2 10.5mm w 4mm w rd00mvs1 l1 18pf 2mm vdd vgg rf-in rf-out 240pf 18pf l2 5mm 6.5mm l4 3pf l3 15mm 10pf 3pf 4mm note:boad material glass epoxi substrate micro strip line width=1mm 50 ohm er:4.8 t=0.6mm l1 enameled wire 4turns d 0.43mm 2.46mmo.d l2 lqg11a68n(68nh murata) l3 enameled wire 9turns d 0.43mm 2.46mmo.d l4 enameled wire 7turns d 0.43mm 2.46mmo.d c1 c2:1000 f 0.022 f in parallel 18mm 10 f 50v 270ohm 4mm 4.5mm 250pf 4mm 4mm 7.7mm 19mm 1.2mm 62pf 4.7kohm c1 c2 5pf 3.2mm w 0.6mm w rd00mvs1 520 mh 7.5nh 18pf 8.5mm 8nh 25.8mm vdd vgg rf-in rf-out 15pf 24pf 13.6nh 2.5mm 0.6mm 25nh 10pf 22pf 15mm 10pf 3pf 7pf note:boad material glass epoxy copper-clad laminates fr-4 micro strip line width = 1 mm 50 ohm er : 4 . 8 t = 0 . 6 mm c 1 c 2 : 1000 f 0 . 022 f in parallel w:line width=1.0mm 19mm
< silicon rf power mos fet ( discrete ) > rd00hvs1 rohs compliance, silicon mosfet power transistor 175mhz,0.5w publication date : oct 2011 5 rd00hvs1 s-parameter data (@vdd=7.2v, id=50ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 1.004 -35.2 13.480 158.7 0.027 66.7 0.928 -24.7 150 0.987 -51.9 12.911 147.1 0.039 56.1 0.889 -36.5 175 0.972 -59.7 12.500 141.6 0.043 50.7 0.865 -42.0 200 0.957 -67.1 12.035 136.2 0.048 45.6 0.843 -47.2 250 0.929 -80.1 11.030 126.6 0.054 37.5 0.796 -56.4 300 0.898 -91.5 10.055 118.7 0.058 30.2 0.754 -64.4 350 0.875 -101.4 9.157 111.3 0.060 23.7 0.716 -71.5 400 0.857 -110.0 8.322 104.9 0.062 18.2 0.688 -77.6 450 0.844 -117.3 7.642 99.3 0.063 13.3 0.668 -83.4 500 0.831 -124.1 6.991 93.9 0.063 8.5 0.652 -88.7 550 0.824 -130.0 6.432 89.5 0.064 4.8 0.640 -93.3 600 0.815 -135.0 5.963 84.9 0.063 1.1 0.633 -97.9 650 0.810 -139.9 5.480 80.7 0.062 -2.3 0.627 -102.1 700 0.809 -144.1 5.103 77.0 0.061 -5.4 0.626 -105.9 750 0.807 -148.1 4.769 73.1 0.060 -8.6 0.625 -109.6 800 0.806 -151.8 4.420 69.9 0.058 -11.0 0.627 -113.4 850 0.808 -155.1 4.161 66.8 0.056 -13.5 0.630 -116.8 900 0.808 -158.0 3.900 63.1 0.054 -16.2 0.634 -120.0 950 0.810 -161.1 3.639 60.3 0.053 -17.8 0.639 -123.3 1000 0.811 -163.9 3.466 57.7 0.051 -20.0 0.645 -126.4 1050 0.814 -166.5 3.254 54.1 0.048 -22.1 0.654 -129.3 1100 0.817 -168.9 3.045 51.9 0.046 -23.5 0.661 -132.1 s11 s21 s12 s22 rd00hvs1 s-parameter data (@vdd=12.5v, id=50ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 1.005 -33.4 13.343 160.0 0.024 68.3 0.898 -22.6 150 0.995 -49.7 12.874 149.0 0.034 57.9 0.865 -33.1 175 0.980 -57.5 12.525 143.6 0.038 53.2 0.845 -38.0 200 0.967 -64.6 12.108 138.3 0.042 47.8 0.826 -42.9 250 0.943 -77.5 11.193 129.0 0.047 39.3 0.781 -51.3 300 0.916 -88.9 10.249 121.2 0.052 32.3 0.743 -58.9 350 0.891 -98.7 9.403 113.9 0.054 26.2 0.709 -65.6 400 0.877 -107.6 8.582 107.3 0.056 20.6 0.681 -71.5 450 0.862 -115.0 7.916 101.9 0.057 15.7 0.661 -77.0 500 0.852 -121.9 7.273 96.4 0.057 11.2 0.644 -82.0 550 0.844 -128.1 6.706 91.9 0.057 7.5 0.633 -86.6 600 0.835 -133.3 6.224 87.3 0.058 3.4 0.625 -91.2 650 0.828 -138.3 5.755 83.0 0.056 0.2 0.619 -95.2 700 0.824 -142.7 5.358 79.3 0.056 -2.5 0.618 -99.0 750 0.823 -146.8 5.024 75.4 0.054 -5.8 0.616 -102.9 800 0.820 -150.6 4.671 72.0 0.053 -8.4 0.615 -106.6 850 0.821 -153.9 4.398 68.9 0.051 -10.5 0.618 -110.1 900 0.822 -157.2 4.134 65.2 0.050 -13.3 0.622 -113.2 950 0.823 -160.2 3.853 62.3 0.048 -15.2 0.628 -116.5 1000 0.822 -163.1 3.677 59.7 0.047 -17.2 0.633 -119.8 1050 0.826 -165.9 3.459 56.3 0.044 -19.5 0.640 -122.9 1100 0.828 -168.4 3.241 53.9 0.042 -20.2 0.646 -125.7 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > rd00hvs1 rohs compliance, silicon mosfet power transistor 175mhz,0.5w publication date : oct 2011 6 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > rd00hvs1 rohs compliance, silicon mosfet power transistor 175mhz,0.5w publication date : oct 2011 7 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporat ion puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to giv e due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regardi ng these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property righ ts, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any product data, diag rams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the tim e of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authoriz ed m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page ( http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a fi nal decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corporation semicondu ctors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporat ion is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be impor ted into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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